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QS043-402-2/5 108 93 9 110 4 - O6.5 93 0 .2 5 2 -M8 4 - O6.5 4 2 -M6 1 20 (E) 4 (G) 3 4 3 3 2 -M4 13 21 29 2 -M4 24 11 20 29 - 0.5 36 +1.0 - 0.5 25.5 +1.0 23 7 PH MB600BS12 ollector-mitter oltage ate-mitter oltage ollector urrent ollector ower issipation unction emperature ange torage emperature ange (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to erminals PHMB600BS12 PH MB600BS12C Dimension:mm 7 23 LABEL 25.5 LABEL 13 14 16 , PHMB600BS12C () 62 (E) 2 (C) 1 2 20 20 62 0 .2 5 80 2 48 1 . (kgfcm) ( ) . ise urn-on all urn-off ime ime ime ime = 1200V,= 0V = 20V,= 0V = 600A,= 15V = 5V,= 600mA = 10V,= 0V,= 1MH = 600V L= 1.0 G= 2.7 = 15V . . . . 37,800 . . . . . . . . . . . . . ollector-mitter ut-ff urrent ate-mitter eakage urrent ollector-mitter aturation oltage ate-mitter hreshold oltage nput apacitance witching ime orward urrent eak orward oltage everse ecovery ime , . . . . . . . = 600A,= 0V = 600A,= -10V i/t= 1200A/s hermal mpedance iode th(j-c) Junction to Case . . . . . 00 QS043-402-3/5 Fig.1- Output Characteristics (Typical) 1200 Fig.2- Output Characteristics (Typical) TC=25C 1200 TC=125C VGE=20V 12V 11V VGE=20V 1000 12V 11V 1000 15V 15V Collector Current I C (A) 800 10V Collector Current I C (A) 800 10V 600 600 9V 400 9V 400 8V 7V 8V 200 200 7V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25C 16 14 12 10 8 6 4 2 0 TC=125C IC=300A 600A 1200A IC=300A 1200A Collector to Emitter Voltage V CE (V) 600A 12 10 8 6 4 2 0 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) 14 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 14 300000 100000 RL=1.0 TC=25C Collector to Emitter Voltage V CE (V) VGE=0V f=1MHZ TC=25C Cies Gate to Emitter Voltage VGE (V) 600 500 400 300 200 100 0 0 12 10 8 6 4 2 0 5000 Capacitance C (pF) 30000 10000 VCE=600V 400V 200V Coes 3000 1000 Cres 300 100 1000 2000 3000 4000 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Total Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) 00 QS043-402-4/5 Fig.7- Collector Current vs. Switching Time (Typical) 2 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 5 3 1.6 VCC=600V RG=2.7 VGE=15V TC=25C Resistive Load VCC=600V IC=600A VGE=15V TC=25C Resistive Load toff ton Switching Time t (s) Switching Time t (s) tOFF 1.2 1 0.3 0.8 tf tON tr(V CE) 0 100 200 300 400 500 600 tf tr(V CE) 0.4 0.1 0 0.03 1 3 10 30 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.9- Collector Current vs. Switching Time 10 10 Fig.10- Series Gate Impedance vs. Switching Time VCC=600V IC=600A VGE=15V TC=125C Inductive Load toff ton 3 Switching Time t (s) 1 Switching Time t (s) tOFF tf 0.3 VCC=600V RG=2.7 VGE=15V TC=125C Inductive Load 5 2 1 0.5 tON 0.1 tr(Ic) 0.2 0.1 tf tr(IC ) 0.03 0.05 0.01 0 200 400 600 800 0.02 1 3 10 30 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.11- Collector Current vs. Switching Loss 250 1000 Fig.12- Series Gate Impedance vs. Switching Loss VCC=600V IC=600A VGE=15V TC=125C Inductive Load Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 200 VCC=600V RG=2.7 VGE=15V TC=125C Inductive Load 300 EON EOFF 150 EON 100 100 EOFF ERR ERR 30 50 0 0 200 400 600 800 1000 10 1 3 10 30 Collector Current IC (A) Series Gate Impedance RG ( ) 00 QS043-402-5/5 1200 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) Fig.14- Reverse Recovery Characteristics (Typical) 1000 1000 TC=25C TC=125C Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) IF=600A TC=25C TC=125C trr Forward Current I F (A) 800 300 600 IRrM 100 400 200 0 0 1 2 3 4 30 0 600 1200 1800 2400 3000 3600 Forward Voltage VF (V) -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 2000 1000 300 RG=2.7 , VGE=15V, TC=125C Collector Current I C (A) 100 30 10 3 1 0.3 0.1 0 200 400 600 800 1000 1200 1400 Collector to Emitter Voltage V CE (V) 3x10 -1 Fig.16- Transient Thermal Impedance Transient Thermal Impedance Rth (J-C) (C/W) 1x10 -1 FRD IGBT 3x10 -2 1x10 -2 3x10 -3 1x10 -3 TC=25C 1 Shot Pulse 3x10 -4 10 -5 10-4 10-3 10 -2 10 -1 1 10 1 Time t (s) 00 |
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